inchange semiconductor isc product specification isc silicon npn power transistor MJE200 description low collector?emitter saturation voltage - dc current gain-bandwidth product high dc current gain complement to mje210 applications designed for low voltage, low-power, high-gain audio amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 8 v i c collector current-continuous 5 a i b b base current 1 a p c collector power dissipation t c =25 15 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 8.34 /w r th j-a thermal resistance,junction to ambient 83.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJE200 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma; i b = 0 25 v v ce (sat)-1 collector-emitter saturation voltage i c = 0.5 a ;i b = 50ma 0.3 v v ce (sat)-2 collector-emitter saturation voltage i c = 2a ;i b = 0.2a 0.75 v v ce (sat)-3 collector-emitter saturation voltage i c =5a ;i b =1a b 1.8 v v be (sat) base-emitter saturation voltage i c =5a ;i b = 1a b 2.5 v v be (on) base-emitter on voltage i c = 2a ; v ce = 1v 1.6 v i cbo collector cutoff current v cb = 40v ; i e = 0 v cb = 40v ; i e = 0;t c = 125 0.1 0.1 a ma i ebo emitter cutoff current v eb = 8v; i c = 0 0.1 a h fe-1 dc current gain i c = 0.5 a ; v ce = 1v 70 h fe-2 dc current gain i c = 2a ; v ce = 1v 45 180 h fe-3 dc current gain i c = 5a ; v ce =2v 10 f t current-gain?bandwidth product i c = 0.1 a; v ce = 10v; f test = 10mhz 65 mhz c ob collector capacitance i e = 0; v cb = 10v; f test = 0.1mhz 80 pf isc website www.iscsemi.cn
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